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TO-3PF 12A Triac
TM1262B-R
s Features
qRepetitive peak off-state voltage: VDRM=600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA max (MODE , , qIsolation voltage: VISO=2000V(AC, 1min.) qFor resistive load qUL approved type available
5.450.1 15.60.2 1.5 4.4 1.5
External Dimensions
(Unit: mm)
3.20.2 5.50.2 9.50.2 230.3
5.50.2 3.450.2
1.6 3.3
)
a b
3.350.2
+0.2 1.75-0.1 +0.2 2.15 -0.1 +0.2 1.05-0.1 5.450.1
(16.2) +0.2 0.65-0.1
(1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G)
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 6.5g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT(RMS) ITSM IGM PGM PG(AV) Tj Tstg VISO
Ratings
600 12 120 2 5 0.5 - 40 to +125 - 40 to +125 2000
Unit
V A A A W W C C Vrms
Conditions
RGK= , Tj= -40C to +125C Conduction angle 360, Tc=98C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C f f 50Hz, duty 50Hz, duty 10% 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current On-state voltage
Symbol
IDRM VTM
Ratings
min typ 0.3 max 2.0 0.1 1.6 0.8 1.1 0.6 0.7 2.1 2.0 5.0 4.5 5.0 25 8.0 8.0 8.0 2.0 2.0 0.1 6 2.0 1.8 1.2 1.2 0.4 0.4
Unit
mA V
Conditions
VD=VDRM, RGK= , Tj=125C
VD=VDRM, RGK= , Tj=25C ITM=16A, TC=25C
T2 , G V VD=20V, RL=40, TC=25C T2 , G T2 , G T2 , G
+ + - - - - +
+
+ -
Gate trigger voltage
VGT
- + + -
T2 , G mA VD=20V, RL=40, TC=25C T2 , G T2 , G T2 , G V mA C/W VD=1/2xVDRM, Tj=125C Tj=25C Junction to case
Gate trigger current
IGT
- +
Gate non-trigger voltage Holding current Thermal resistance
VGD IH Rth
60
TM1262B-R
vT - iT Characteristics (max)
100 Surge on-state current ITSM (A)
ITSM Ratings
140 120 100 80 60 40 20 0
Initial junction temperature Tj=125C ITSM 10 ms 1cycle
IT(RMS) - PT(AV) Characteristics
14
Full-cycle sinewave
Average on-state power PT(AV) (W)
12 Conduction angle :360 10 8 6 4 2 0
iT (A)
Tj =125C 10 Tj =25C
On-state current
1
0.1 0.4 0.8 1.2 1.6
2.0 2.4 2.8 3.2 3.6
1
5
10
50
100
0
2
4
6
8
10
12
On-state voltage
vT ( V )
Number of cycle
RMS on-state current IT(RMS) (A)
IT(RMS) - Tc Ratings
150
Full-cycle sinewave Conduction angle :360
Gate Characteristics
50 Mode VGM =10V PGM =5W 25C VGT1=1.8V - 40C VGT1=2.2V PG(AV)=0.5W -40C VGT2,3=1.5V -40C IGT=25mA
VGT temperature characteristics
(Typical)
2.4 2.0 1.6 1.2 0.8 0.4 0 -40 (VD=20V RL=40 ) Mode Gate trigger voltage VGT (V)
Case temperature TC (C)
125 100 75 50 25 0 0 2 4 6 8 10 12 14 RMS on-state current IT(RMS) (A)
vGF (V)
Gate voltage
10 5
25C 5 VGT2.3=1.2V
0.1 VGD=0.1V 1 10
25C IGT=8mA
100
1000
IGM =2A 5000
1
0
25
50
75
100
125
Gate current
iGF (mA)
Junction temperature Tj (C)
VGT (Mode
(Typical)
2.4 2.0 1.6 1.2 0.8 0.4 0 -40
) temperature characteristics
(VD=20V RL=40 )
IGT temperature characteristics
(Typical)
50 Gate trigger current IGT (mA) (VD=20V RL=40 )
IH temperature characteristics
(Typical)
50 (RG-K=1k)
Gate trigger voltage VGT (V)
10 5
Holding current IH (mA) 0 25 50 75 100 125
10 5
1 0.5 -40
1 0.5 -40
0
25
50
75
100
125
0
25
50
75
100
125
Junction temperature Tj (C)
Junction temperature Tj (C)
Junction temperature Tj (C)
IL temperature characteristics
(Typical)
1000 (RG-K=)
rth(j-c) - t Characteristics
rth (j-c) (C/W)
Transient thermal resistance 5
Latching current IL (mA)
100
10
1
1 -40
0
25
50
75
100
125
0.5 1 10
102
103
104
105
Junction temperature Tj (C)
t, Time (ms)
61

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